| PART |
Description |
Maker |
| MC3334D MC3334P ON1029 |
HIGH ENERGY IGNITION CIRCUIT
From old datasheet system
|
Motorola, Inc
|
| 9333407 93334-S08-T |
HIGH ENERGY IGNITION CIRCUIT
HIGH ENERGY IGNITION CIRCUIT
|
Unisonic Technologies
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| MCCF79076DW |
Electronic ignition control circuit
|
Motorola
|
| BU931T 5941 BUB931T BUB931TT4 |
TRANSISTOR | BJT | DARLINGTON | NPN | 400V V(BR)CEO | 10A I(C) | TO-263AB
From old datasheet system
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLIGTONS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ISL9V3036S3ST ISL9V3036D3S04 ISL9V3036D3ST ISL9V30 |
17A, 360V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9V3040D3S04 ISL9V3040S3ST ISL9V3040D3S ISL9V304 |
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| BYX134GPL |
HIGH VOLTAGE AUTOMOTIVE IGNITION DIODE
|
EIC discrete Semiconductors
|
| BYX134G |
High-voltage car ignition diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| VB921 VB921ZVFI VB921ZVSP |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
|
STMicroelectronics
|
| VB026BSP |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
|
STMICROELECTRONICS[STMicroelectronics]
|
